Semiconductor device and production method of a semiconductor de

Details Semiconductor device and production method of a semiconductor de Semiconductor device and production method of a semiconductor de

1998-04-09

2000-07-25

Tsai, Jey

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438240, H01L 218242, H01G 706

Patent

active

060935758

ABSTRACT:
When a capacitor is formed on a semiconductor substrate, a lower electrode of the capacitor is first formed. After an insulating film is formed on the lower electrode, it is selectively etched until the lower electrode is exposed, and in this way, a hole portion is formed in the insulating film. After a ferroelectric film is formed inside the hole portion and on the insulating film, the ferroelectric film is polished and removed by a chemical-mechanical polishing method in such a manner as to leave the ferroelectric film inside the hole portion. Thereafter, an upper electrode of the capacitor is formed on the ferroelectric film.

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patent: 5330931 (1994-07-01), Emesh et al.
patent: 5369296 (1994-11-01), Kato
patent: 5416042 (1995-05-01), Beach et al.
patent: 5506166 (1996-04-01), Sandhu et al.
patent: 5844771 (1998-12-01), Graettinger et al.
patent: 5907762 (1999-05-01), Evans et al.

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