Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1999-01-04
2000-07-25
Rosasco, S.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430323, 430394, G03F 900
Patent
active
060935073
ABSTRACT:
A method is described of forming phase shifting masks using a single layer of resist and a single electron beam exposure step with two different exposure doses. A layer of resist is formed on a layer of opaque material formed on a transparent mask substrate. A first pattern is exposed in the entire thickness of the layer of resist, using a first exposure dose, and a second pattern is exposed in the top portion of the layer of resist, using s second exposure dose smaller than the first exposure dose. The layer of resist is then developed and baked. The first pattern in then etched in the layer of opaque material and a first thickness of the transparent mask substrate. The first thickness of the transparent mask substrate provides a 180.degree. phase shift to light used to transfer the mask pattern to an integrated circuit wafer. Part of the layer of resist is then etched away transferring the second pattern to the resist that remains. The second pattern is then etched in the layer of opaque material. The remaining resist is then stripped and the mask is completed.
REFERENCES:
patent: 4935334 (1990-06-01), Boettiger et al.
patent: 5413884 (1995-05-01), Koch et al.
patent: 5582939 (1996-12-01), Pierrat
patent: 5604081 (1997-02-01), Stoll
patent: 5753417 (1998-05-01), Ulrich
patent: 5759724 (1998-06-01), Rolson
patent: 5780188 (1998-07-01), Rolson
patent: 5783337 (1998-07-01), Tzu et al.
patent: 5853923 (1998-12-01), Tzu
Takahashi et al., "Primary Processes in E-Beam and Laser Lithographies for Phase-Shift Mask Manufacturing", SPIE vol. 1674, Optical/Laser Microlithography V (1992), pp. 216-229.
Kurihara et al., "Primary Processes in E-Beam and Laser Lithographies for Phase-Shift Mask Manufacturing II," 12.sup.th Annual Bacus Symposium SPIE vol. 1809 (1992), pp. 50-61.
Ackerman Stephen B.
Prescott Larry J.
Rosasco S.
Saile George O.
Taiwan Semiconductor Manufacturing Company
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