Semiconductor laser

Details Semiconductor laser Semiconductor laser

1993-09-21

1994-09-06

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

053454642

ABSTRACT:
A semiconductor laser includes a semiconductor substrate of a first conductivity type; a double heterojunction structure comprising a lower cladding layer of the first conductivity type disposed on the semiconductor substrate and having a first energy band gap, a band gap discontinuity reduction layer of the first conductivity type having a thickness from five to forty nanometers disposed on the lower cladding layer and having a second energy band gap, an undoped active layer disposed on the band gap discontinuity reduction layer and having a third energy band gap smaller than the first energy band gap, the second energy band gap being intermediate the first and third energy band gaps, and an upper cladding layer of a second conductivity type, opposite the first conductivity type, disposed on the active layer and having a fourth energy band gap larger than the third energy band gap, the double heterojunction structure having a ridge shape; a current confinement structure disposed on opposite sides of the double heterojunction structure for confining current flow to the double heterojunction structure; and first and second electrodes electrically contacting the semiconductor substrate and the upper cladding layer, respectively.

REFERENCES:
patent: 4972238 (1990-11-01), Tanaka
patent: 4984244 (1991-01-01), Yamamoto et al.
Takemoto et al., "Improvement Of High Power/High Temperature Operation Of Long Wavelength Laser Diodes By Band Discontinuity Reduction Layer", IEEE International Semiconductor Laser Conference, Sep. 1992, pp. 48-49.
Takemoto et al, "1 3 .mu.m InGaAsP/InP Distributed-Feedback P-Substrate Partially Inverted Buried-Heterostructure Laser Diode", Electronics Letters, vol. 23, No. 11, May 1987, pp. 546-547.
Shim et al, "A New Distributed-Reflector (DR)-Type Dynamic-Single-Mode Laser", IEICE Fall Conference, Sep. 1991, p. 4-158.
Yamaguchi et al, "Highly Efficient Single-Longitudinal-Mode Operation Of Antireflection-Coated 1 3 .mu.m DFB-DC-PBH LD", Electronics Letters, vol. 20, No. 6, Mar. 1984, pp. 233-235.
Besomi et al, "High-Temperature Operation Of 1 55 .mu.m InGaAsP Double-Channel Buried-Heterostructure Lasers Grown By LPE", Electronics Letters, vol. 20, No. 10, May 1984, pp. 417-419.

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