Semiconductor laser with improved oscillation wavelength reprodu

Details Semiconductor laser with improved oscillation wavelength reprodu Semiconductor laser with improved oscillation wavelength reprodu

1993-04-13

1994-09-06

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

053454634

ABSTRACT:
A lateral mode control type of semiconductor laser has a high-yield structure having a long life and improved oscillation wavelength reproducibility. A diffusion limit layer formed of an undoped Ga.sub.0.5 In.sub.0.5 P layer and an undoped (Al.sub.0.6 Ga.sub.0.4).sub.0.5 In.sub.0.5 P layer is provided between a p-(Al.sub.0.6 Ga.sub.0.4).sub.0.5 In.sub.0.5 P clad layer and an undoped Ga.sub.0.5 In.sub.0.5 P active layer. The diffusion limit layer has a diffusion coefficient smaller than that of the clad layer. Impurity Zn diffused from the p-(Al.sub.0.6 Ga.sub.0.4).sub.0.5 In.sub.0.5 P clad layer during crystal growth or working is trapped in the undoped Ga.sub.0.5 In.sub.0.5 P layer almost entirely. A part of the impurity Zn diffuses in the undoped (Al.sub.0.6 Ga.sub.0.4).sub.0.5 In.sub.0.5 P layer thereunder but does not reach the undoped Ga.sub.0.5 In.sub.0.5 P active layer.

REFERENCES:
patent: 5177757 (1993-01-01), Tsugami

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