Semiconductor surface emitting laser having enhanced polarizatio

Coherent light generators – Particular active media – Semiconductor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Other Related Categories

372 46, 372 96, 372 99, H01S 319

Type

Patent

Status

active

Patent number

053454626

Description

ABSTRACT:
Applicant has demonstrated that by appropriately shaping the laser gain region one can control the polarization direction of semiconductor vertical cavity lasers and enhance their transverse mode selectivity. Specifically, configuring the transverse cross section to regions have a length-to-width ratio in excess of 1.2 favors emission with polarization in the long dimension at the fundamental mode. A cruciform structure favors emission with switchable orthogonal polarization. The transverse shape can be configured by dry etching a particular cavity shape in index guided lasers or by forming a shaped ion implantation region around gain guided lasers.

REFERENCES:
patent: 4949350 (1990-08-01), Jewell et al.
patent: 4949351 (1990-08-01), Imanaka
patent: 5115441 (1992-05-01), Kopf et al.
patent: 5226053 (1993-07-01), Cho et al.
C. J. Chang-Hasnain, et al. "Polarization characteristics of quantum well vertical cavity surface emitting lasers," Electron. Lett. vol. 27, p. 163 (1991)-Jan.
T. Mukaihara, et al. "Stress effect for polarization control of surface emitting lasers", Electron. Lett. vol. 28, p. 555, (1992)-Mar.
M. Shimuzi, et al. "Polarization control for surface emitting lasers," Electron. Lett. vol. 27, p. 1067 (1991)-Jun.
T. Mukaihara, et al. "Engineered polarization control of GaAs/AlGaAs surface emitting lasers by anisotropic stress from elliptical etched substrate hole," Photon. Tech. Lett. vol. 5, p. 133 (1993)-Feb.
A. Chavez-Pirson, et al. "Polarization properties of a vertical-cavity surface emitting laser using a fractional layer superlattice gain medium", Appl. Phys. Lett. vol. 62, p. 3082 (1993)-Jun.
P. L. Gourley, et al. "High-efficiency TEM sub 00 cw epitaxial surface-emitting lasers and effect of half-wave periodic gain", Appl. Phys. Lett. vol. 54, p. 1209 (1989)-Mar.
C. J. Chang-Hasnain, et al. "Transverse mode characteristics of vertical-cavity surface emitting lasers," Appl. Phys. Lett. vol. 57, p. 218 (1990)-Jul.
M. Mori, et al. "Effect of cavity size on lasing characteristics of a distributed Bragg reflector surface emitting laser with buried heterostructure", Appl. Phys. Lett. vol. 60, p. 21 (1992)-Jan.
R. A. Morgan, et al. "Transverse mode control of vertical-cavity top surface emitting lasers," Photon. Tech. Lett. vol. 4, p. 374 (1993)-Apr.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor surface emitting laser having enhanced polarizatio does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor surface emitting laser having enhanced polarizatio, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor surface emitting laser having enhanced polarizatio will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1334502

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.