Static information storage and retrieval – Floating gate – Particular biasing
Patent
1993-11-12
1994-09-06
Fears, Terrell W.
Static information storage and retrieval
Floating gate
Particular biasing
365 51, 365218, 365226, 365900, G11C 1140
Patent
active
053454189
ABSTRACT:
A single-transistor EEPROM device of the present invention comprises memory transistors in banks similar to NAND structures wherein the control gates of the memory transistors have negative voltages applied in various modes that allow reading, writing, and programming regardless of the V.sub.th of nonselected memory transistors in a bank. Programming and erasing results from various combinations of negative and positive voltages are used on the select gates together with positive voltages less than that alone which is necessary to induce Fowler-Nordheim tunneling are applied to the bit lines.
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patent: 4996668 (1991-02-01), Paterson et al.
patent: 5197027 (1993-03-01), Challa
M. Momodomi et al., "New Device Technologies for 5V-Only 4Mb EEPROM with NAND-Structure Cell," IEDM Tech Dig., 1988, pp. 412-415.
Fears Terrell W.
Nexcom Technology, Inc.
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