Method of forming silicone film

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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Details

427379, 427299, 118620, 118715, 118728, B05D 306

Patent

active

048942545

ABSTRACT:
A silicone film is formed by drying a solution coated on a substrate at a temperature below 150.degree. C. to form a silicone film on the substrate, treating the silicone film in an oxygen plasma, and heating the silicone film treated in the plasma at a temperature of 150.degree. C. or higher.

REFERENCES:
patent: 4741919 (1988-03-01), Takasaki
patent: 4756977 (1988-07-01), Haluska et al.
patent: 4792378 (1988-12-01), Rose et al.

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