Method for manufacture of a selective chemical sensitive FET tra

Details Method for manufacture of a selective chemical sensitive FET tra Method for manufacture of a selective chemical sensitive FET tra

1980-02-05

1982-10-19

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29569R, 29583, 148187, 204195B, 357 25, H01L 2122

Patent

active

043543081

ABSTRACT:
A selective chemical sensitive field-effect transistor device for use in detection and measurement of chemical properties of substances to which the device is exposed is disclosed. The chemical sensitive FET device comprises a semiconductor substrate, at least one pair of spaced apart diffusion layers formed on one surface of the semiconductor substrate and forming source and drain regions, respectively, and a double layer structure consisting of a silicon oxide layer and an electrically insulating layer overlaying the silicon oxide layer. A gate region located on a portion of the surface of the semiconductor substrate between the diffusion layers is overlaid with a chemical selective membrane adapted to interact with certain substances. A method for the manufacture of the above described FET device is also disclosed.

REFERENCES:
patent: 4020830 (1977-05-01), Johnson et al.
patent: 4218298 (1980-08-01), Shimada et al.
Esashi et al., J. of the Japan Soc. of Appl. Phys., vol. 44 (1975), pp. 339-343, 357-425.
Matsuo et al., IEEE Trans. on Biomed. Eng., Nov. (1974), pp. 485-487.
Finne et al., J. Electrochem. Soc.: Solid State Science, Sep. 1967, pp. 965-970.
Moss et al., Analytical Chemistry, vol. 47, No. 13, Nov. 1975, pp. 2238-2243.
Janata et al., Biomedical Engineering, Jul. 1976, pp. 241-245.

Affiliated with

Also associated with

Rating

Method for manufacture of a selective chemical sensitive FET tra does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacture of a selective chemical sensitive FET tra, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacture of a selective chemical sensitive FET tra will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1333578