Process simulation method for calculating a surface oxidant conc

Details Process simulation method for calculating a surface oxidant conc Process simulation method for calculating a surface oxidant conc

1998-04-24

2000-03-28

Teska, Kevin J.

G06F 9455

Patent

active

060442131

ABSTRACT:
The present invention provides a method of simulating a process for oxidation of silicon. The method comprises the following steps. A time "t" of oxidation calculation is set at zero. An effective surface oxidant concentration of a silicon surface exposed to an oxygen atmosphere is calculated assuming that a spontaneous silicon oxide film as an initial silicon oxide film extends over the silicon surface. The time "t" of oxidation calculation is forwarded by a predetermined time increment .DELTA.t. An oxidation rate is calculated by use of one of the effective surface oxidant concentration and the surface oxidant concentration. A new silicon surface is formed based upon the calculated oxidation rate and the time increment .DELTA.t. Variations in thickness of the silicon oxide film over time are found by a deformation calculation. There is verified whether or not the time "t" of oxidation calculation reaches a predetermined end time so that if the time "t" of oxidation calculation reaches the predetermined end time, then a current simulation is ended, while if the time "t" of oxidation calculation does not reach the predetermined end time, then an oxidant diffusion equation is solved for a deformed silicon oxide film to calculate the surface oxidant concentration of the silicon surface to be oxidized. A loop comprising the sequential third to seventh steps is repeated until the time "t" of oxidation calculation reaches the predetermined end time.

REFERENCES:
patent: 4728619 (1988-03-01), Pfiester et al.
patent: 4957873 (1990-09-01), Ojha et al.
patent: 5328559 (1994-07-01), Jerman
patent: 5674762 (1997-10-01), See et al.
patent: 5700712 (1997-12-01), Schwalke
patent: 5834379 (1998-11-01), Shealy et al.
Uchida et al., A Simulation of Plastic Deformation of Silicon During Thermal Oxidation, Jun. 1993, pp. 12.7.1-12.7.4.
Senez et al., Two-Dimensional Simulation of Local Oxidation of Silicon: Calibrated Viscoelastic Flow Analysis, Mar. 1996 pp. 720-731.

Affiliated with

Also associated with

Rating

Process simulation method for calculating a surface oxidant conc does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process simulation method for calculating a surface oxidant conc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process simulation method for calculating a surface oxidant conc will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1333497