Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1985-01-10
1986-10-14
Ozaki, George T.
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29576W, 29591, 148187, H01L 21425, H01L 21445
Patent
active
046164014
ABSTRACT:
A method of fabricating a MOS device is disclosed, in which, after formation of a gate electrode and source, drain regions, conductive material films are formed by selective CVD on the exposed surfaces of the gate electrode and source, drain regions. The conditions of the selective CVD are set such that the conductive material films formed on the source and drain regions partly overlay over the field insulating film adjacent to and surrounding the source and drain regions.
REFERENCES:
patent: 4016594 (1977-04-01), Shappir
patent: 4330931 (1982-05-01), Liu
patent: 4441247 (1984-04-01), Gargini et al.
patent: 4506434 (1985-03-01), Ogawa et al.
patent: 4510670 (1985-04-01), Schwabe et al.
patent: 4512073 (1985-04-01), Hsu
patent: 4521952 (1985-06-01), Riseman
IBM Technical Disclosure Bulletin, vol. 21, No. 3, Aug., 1978, pp. 1250-1251, New York, US: V. L. Rideout "Fabricating Low Resistance Interconnection Lines and FET Gates in a Single Step", p. 1251, last two paragraphs.
Applied Physics Letters, vol. 44, No. 12, Jun. 15th, 1984, pp. 1139-1141, New York, US; W. A. Metz et al.: "Electrical Properties of Selectively Deposited Tungsten Thin Film", p. 1139, paragraphs 2,5.
Kabushiki Kaisha Toshiba
Ozaki George T.
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