Semiconductor integrated circuit

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365208, 365212, 365229, 36518908, 307125, G11C 700

Patent

active

059869607

ABSTRACT:
A semiconductor integrated circuit having a DRAM, or the like, includes a memory cell block containing a plurality of memory cells, and a core circuit portion for selecting and activating a specified memory cell inside the memory cell block, and is constituted so that a step-up voltage is applied to the core circuit portion at the time of an activated state. The semiconductor integrated circuit further includes a step-up voltage lowering unit for lowering the step-up voltage by a predetermined value and a unit for selectively supplying the step-up voltage and an output voltage of the step-up voltage lowering unit to the core circuit portion.

REFERENCES:
patent: 4967397 (1990-10-01), Kajigaya
patent: 5274601 (1993-12-01), Kawahara et al.
patent: 5305262 (1994-04-01), Yoneda
patent: 5673231 (1997-09-01), Furutani
patent: 5726930 (1998-03-01), Hasegawa

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