Semiconductor laser device

Coherent light generators – Particular active media – Semiconductor

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352 50, H01S 3085

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active

060441011

ABSTRACT:
A semiconductor laser device having a multiplicity of individual lasers disposed in a laser-active region within outer boundary surfaces having front and rear boundary surfaces extending crosswise to an exit direction of the laser light, and lateral, bottom and top boundary surfaces extending parallel to the exit direction of the laser light, includes an absorption layer for decoupling photons interfering with desired laser operation, the absorption layer being applied full-surface to all of the outer boundary surfaces of the laser device, except for the laser-active region for at least one of the front and the rear boundary surfaces, respectively, extending crosswise to the exit direction of the laser light, and except for a relatively few locations remaining free for disposing terminal electrodes thereon or for introducing pump light thereat.

REFERENCES:
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patent: 4712220 (1987-12-01), Luft
patent: 4792200 (1988-12-01), Amann et al.
patent: 5063570 (1991-11-01), Botez et al.
"Low-noise and high-power real refractive index guided laser array", T. Takayama et al., Electronics Letters, 4.sup.th Aug. 1994, vol. 30, No. 16, pp. 1307-1308.
"Regular integrated array of stripe injection lasers", V.I. Malakhova et al., Sov. J. Quantum Electron. 11(10), Oct. 1981, pp. 1351-1352.
"Index-guided arrays of Schottky barrier confined lasers", H. Temkin et al., Appl. Phys. Lett. 46(5), Mar. 1, 1985, pp. 465-466.

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