Heterojunction bipolar transistor including collector region of

Details Heterojunction bipolar transistor including collector region of Heterojunction bipolar transistor including collector region of

1992-09-23

1994-09-06

Ngo, Ngen Van

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257187, 257191, 257197, 257586, 437126, 437133, H01L 29161, H01L 29205, H01L

Patent

active

053450973

ABSTRACT:
A heterojunction bipolar transistor includes a collector region made of first-conduction-type InP. and a base region connected to the collector region and made of second-conduction-type In.sub.x (Ga.sub.y Al.sub.1-y).sub.1-x As where the letters "x" and "y" denote predetermined atomic fractions. The atomic fraction "x" is in the range of 0.52 to 0.53. The atomic fraction "y" is in the range of 0.35 to 0.72.

REFERENCES:
patent: 4821082 (1989-04-01), Frank et al.
patent: 5010382 (1991-04-01), Katoh
patent: 5153461 (1992-10-01), Takatsu
"Real-Space Transfer And Hot-Electron Transport Properties in III-V Semiconductor Heterostructures" by Sakamoto et al; IEEE Transactions On Electron Devices, vol. 36 No. 10, Oct. 1989; pp., 2344-2352.
"NpnN Double-Heterojunction Bipolar Transistor on InGaAsP/InP" by Kaumanns et al; Appl. Phys. Lett. 47(1), Jul. 1, 1985; pp., 28-30.
"Fully Self-Aligned ALGaAs.GaAs HBT with ALGSaAs Passivation Layer" by Hayama et al; ED89-147; pp., 67-74 (English abstract is attached).
"Subpicosecond InP/InGaAs Heterostructure Bipolar Transistors" by Chen et al; IEEE Electron Device Letters, vol. 10, No. 6, Jun. 1989; pp., 267-269.
"High-Current-Gain InGaAs/InP Double-Heterojunction Bipolar Transistors Grown By Metal Organic Vapor Phase Epitaxy" by Sugiura et al; IEEE Electron Device Letters, vol. 9, No. 5, May 1988; pp., 253-255.
"A Tunneling Emitter Bipolar Transistor" by Xu et al; IEEE Electron Device Letters, vol. EDL-7, No. 7, Jul. 1986; pp., 416-418.

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