Method of making an integrated circuit with oxidizable trench li

Details Method of making an integrated circuit with oxidizable trench li Method of making an integrated circuit with oxidizable trench li

1996-12-10

1999-07-20

Fourson, George R.

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

438431, 438432, 438692, H01L 2176, H01L 2162

Patent

active

059267178

ABSTRACT:
A method for isolating a first active region from a second active region, both of which are configured within a semiconductor substrate. The method comprises forming a trench in the semiconductor substrate between said first active region and said second active region. A first dielectric layer is then formed on said trench and a polysilicon layer is deposited on said first dielectric layer. The polysilicon layer is then thermally oxidized to form a second dielectric layer. Preferably the first dielectric is a thermal oxide 40 to 500 angstroms in thickness consuming less than 200 angstroms of said first active region and said second active region. The polysilicon layer is preferably between 1000 to 2000 angstroms.

REFERENCES:
patent: 4356211 (1982-10-01), Riseman
patent: 4471525 (1984-09-01), Sasaki
patent: 4493740 (1985-01-01), Komeda
patent: 4621414 (1986-11-01), Iranmanesh
patent: 4666556 (1987-05-01), Fulton et al.
patent: 4921816 (1990-05-01), Ino
patent: 4978634 (1990-12-01), Shen et al.
patent: 5075248 (1991-12-01), Yoon et al.
patent: 5234856 (1993-08-01), Gonzalez
patent: 5246537 (1993-09-01), Cooper et al.
patent: 5248625 (1993-09-01), Pasch
patent: 5250458 (1993-10-01), Tsukamoto et al.
patent: 5258321 (1993-11-01), Shimizu et al.
patent: 5346845 (1994-09-01), Jun
patent: 5472904 (1995-12-01), Figura et al.
patent: 5504027 (1996-04-01), Jeong et al.
patent: 5521111 (1996-05-01), Sato
patent: 5571743 (1996-11-01), Henkels et al.

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