Plasma processing apparatus and plasma processing method

Details Plasma processing apparatus and plasma processing method Plasma processing apparatus and plasma processing method

1998-01-26

2000-07-25

Thibodeau, Paul

Coating apparatus

Gas or vapor deposition

With treating means

118724, 156345, 20429834, C23C 1600, C23C 1400, C23F 102

Patent

active

060924861

ABSTRACT:
The plasma processing apparatus and plasma processing method of the present invention are suitable for the application of plasma processing to etching, ashing, CVD, etc. in the manufacturing of large scale integrated circuits (LSIs) and liquid crystal display panels (LCDs), and useful for the manufacturing of LSIs and LCDs. The apparatus is characterized in that the reaction chamber has its side wall separated into an inner side wall which faces to the interior of the reaction chamber and an outer side wall which faces to the exterior of the reaction chamber, with the inner side wall being isolated electrically from other portions of the reaction chamber and not grounded electrically. This structure improves the repeatability of plasma processing. The apparatus is also characterized in that the inner side wall of reaction chamber is isolated thermally from other portions of the reaction chamber and equipped with temperature control means. This structure improves the temperature control performance for the inner side wall and also improves the maintainability of the apparatus.

REFERENCES:
patent: 5545258 (1996-08-01), Katayama et al.
patent: 5580384 (1996-12-01), Thiebaud et al.
patent: 5846332 (1998-12-01), Zhao et al.
patent: 5961850 (1999-10-01), Satou et al.

Affiliated with

Also associated with

Rating

Plasma processing apparatus and plasma processing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing apparatus and plasma processing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing apparatus and plasma processing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1329377