Optical semiconductor device

Details Optical semiconductor device Optical semiconductor device

1997-09-16

2000-03-28

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

257 81, 257 97, 257 99, 372 43, 372 70, 372 75, 372106, H01L 3300, H01S 319, H01S 3091

Patent

active

060435151

ABSTRACT:
An optical semiconductor device has a structure in which a semiconductor active layer is sandwiched by a p-type semiconductor cladding layer and an n-type semiconductor cladding layer and a p-type contact layer is formed on the p-type semiconductor cladding layer side and an n-type contact layer is formed on the n-type semiconductor cladding layer side, wherein two ferromagnetic layers are formed on the n-type contact layer and two ferromagnetic layers are formed on the p-type contact layer. Magnetization directions of a pair of ferromagnetic layers vertically opposed to each other are set to be parallel to each other, and the magnetization directions of adjacent ferromagnetic layers are inverted to each other.

REFERENCES:
patent: 5287377 (1994-02-01), Fukuzawa
patent: 5513204 (1996-04-01), Jayaraman
patent: 5698863 (1997-12-01), Pelekanos
patent: 5793054 (1998-08-01), Nido

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