Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1997-09-05
2000-03-28
Picard, Leo P.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 65, 257 57, 257 59, 257347, 438158, 438159, 438160, H01L 2978, H01L 21236
Patent
active
060435127
ABSTRACT:
A thin semiconductor film device according to the present invention includes an insulative substrate, a metal layer formed on the insulative substrate, and a metal oxide layer formed on the metal layer. The metal oxide layer is obtained from anodization of the metal layer. In a preferred embodiment, an insulation film of silicon oxide or silicon nitride is formed on the metal oxide layer, and a semiconductor layer obtained by crystallizing the amorphous silicon layer is formed on the insulation film.
REFERENCES:
patent: 5821559 (1998-10-01), Yamazaki et al.
Duong Hung Van
Picard Leo P.
Sharp Kaubushiki Kaisha
LandOfFree
Thin film semiconductor device and method for producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film semiconductor device and method for producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film semiconductor device and method for producing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1327969