Metal-insulator-metal capacitor

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

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Details

3613214, 257296, 257303, 257310, H01G 406

Patent

active

059263598

ABSTRACT:
An interconnection wiring system incorporating two levels of interconnection wiring separated by a first dielectric, a capacitor formed by a second dielectric, a bottom electrode of the lower interconnection wiring or a via and a top electrode of the upper interconnection wiring or a separate metal layer. The invention overcomes the problem of leakage current and of substrate stray capacitance by positioning the capacitor between two levels of interconnection wiring.

REFERENCES:
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patent: 5366920 (1994-11-01), Yamamichi et al.
patent: 5436477 (1995-07-01), Hashizume et al.
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patent: 5440174 (1995-08-01), Nishitsuji
patent: 5670808 (1997-09-01), Nishihori et al.
IBM Technical Disclosure Bulletin, vol. 38, No. 2, Feb. 1, 1995, pp. 611-613, "High Capacitance Tungsten to Metal 1 Capacitor for High Frequency Applications".
James L. McCreary, "Matching Properties, and Voltage and Temperature Dependence of MOS Capacitors", IEEE Journal of Solid-State Circuits, Dec. 1981, pp. 608-616, vol. SC-16, No. 6.
K. Machida et al., "Metal-insulator-metal capacitors by using electron cyclotron resonance plasma-SiO.sub.2 ", Journal Vacuum Science Technology, B, 13(5), pp. 2013-2015, Sep./Oct. 1995.

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