Electric device of hydrogenated amorphous silicon and method of

Details Electric device of hydrogenated amorphous silicon and method of Electric device of hydrogenated amorphous silicon and method of

1992-11-17

1994-09-06

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136255, 257 53, 257458, 437 3, 437 4, 437173, H01L 310392, H01L 310376, H01L 3120

Patent

active

053444990

ABSTRACT:
The electro-migration of electrode metal takes place under an elevated temperature condition in amorphous silicon devices having conventional PI-type, NI-type, or PIN-type hydrogenated amorphous silicon layered structures, which substantially degrades the electrical characteristics of the devices. This problem is solved by forming a chemically inactive layer consisting mainly of amorphous silicon oxide on the surface of amorphous silicon layer by an aqueous washing and drying process, to establish electrical contacts through the chemically inactive layer between the hydrogenated amorphous silicon layer and either a collector electrode or a transparent electrode. This structure not only prevents such electromigration of electrode metal, but it also allows a greater freedom for choosing a material for the collector electrode.

REFERENCES:
patent: 4117506 (1978-09-01), Carlson et al.
patent: 4200473 (1980-04-01), Carlston
patent: 4675466 (1987-06-01), Ramaprasad
patent: 4770716 (1988-09-01), Ramaprasad
patent: 4838950 (1989-06-01), Ramaprasad
T. Kanbara et al, Jap. J. Appl. Phys., vol. 30, No. 8, Aug. 1991, pp. 1653-1658.
Denshi-Tsushin-Gakkai (Institute of Electronics and Communications), cover page & p. 256 of LSI Handbook, published Nov. 30, 1984.
S. Arimoto et al., "Anodic Oxydation For Enhancement of Fabrication Yield and Efficiency of Amorphous Silicon Solar Cells", in Journal of the Electrochemical Society, vol. 135, No. 2, pp. 431-436 (Feb. '88).
A. Madan et al., "Metal-Insulator-Semiconductor Solar Cells Using Amorphous Si:F:H Alloys", in Applied Physics Letters, vol. 37, No. 9, pp. 826-828 (Nov. '80).
M. Faraji et al., "Photovoltaic, I-V and C-V Characteristics of SnO.sub.2 /SiO.sub.2 /a-Si:H/mc-Si:H Structures", in Japanese Journal of Applied Physics, vol. 29, No. 11, pp. 2080-2081 (Nov. 1990).

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