Method of manufacturing a monitor pad for chemical mechanical po

Details Method of manufacturing a monitor pad for chemical mechanical po Method of manufacturing a monitor pad for chemical mechanical po

1998-06-19

2000-03-28

Wood, Elizabeth

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438763, 438700, 438702, 438703, H01L 2170

Patent

active

060431601

ABSTRACT:
A method of manufacturing a monitor pad for measuring the topographic step height for the CMP planarization process is provided. The monitor pad contains an area having step height lower than the worst condition on the wafer. The method comprises the steps of forming a field oxide area; defining area A, area B, and area C on the field oxide area and area B being located between area A and area C; and forming a multiple layers of polysilicon and metal on area A and area C. Consequently, the step height of area B is lower than the worst condition on the wafer. The step height of the monitor pad will be enough to reflect the polish condition on the surface of the wafer after CMP planarization.

REFERENCES:
patent: 5674758 (1997-10-01), McCarthy
patent: 5756390 (1998-05-01), Juengling et al.
patent: 5798302 (1998-08-01), Hudson et al.
patent: 5834375 (1998-11-01), Chen
patent: 5834377 (1998-11-01), Chen et al.
patent: 5935870 (1999-08-01), Lee

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