Semiconductor device and method of manufacturing same

Details Semiconductor device and method of manufacturing same Semiconductor device and method of manufacturing same

Filed on

1978-04-27

Date issued

1979-08-21

Examiner

Clawson, Jr., Joseph E.

Other Related Categories

357 52, 357 56, 357 89, H01L 2972

Type

Patent

Status

active

Patent number

041655168

Description

ABSTRACT:
A high voltage transistor having successively an emitter zone, a highly doped base part, a low doped base part, a low doped collector part and a highly-doped collector part. At a distance from the highly doped base part, a groove is provided which extends down into the highly doped collector part and forms therebelow a channel stopper. The groove may be passivated with neutral, or, if desired, with positively charged glass or oxide while still maintaining a high collector-base breakdown voltage.

REFERENCES:
patent: 3908187 (1975-09-01), Sheldon et al.
patent: 3911472 (1975-10-01), Craft
patent: 3922709 (1975-11-01), Wallmark et al.
R. Denning et al., "Epitaxial .epsilon.-y n-p-n High-Voltage Power Transistors," IEEE Trans. on Elec. Dev., vol. ED-17#9, Sep. 1970, pp. 711-716.

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