Random access memory cell with MIS capacitor having insulator of

Details Random access memory cell with MIS capacitor having insulator of Random access memory cell with MIS capacitor having insulator of

1986-08-06

1988-05-10

Munson, Gene M.

357 2311, 357 54, H01L 2978, H01L 2934

Patent

active

047439530

ABSTRACT:
A semiconductor device such as a MIS type capacitor which including a semiconductor substrate of one conductive sign (p-type silicon substrate), a region (n-type) of conductive sign opposite to that of the substrate formed in the substrate, an electrode making up a capacitor formed on the substrate apart from the region of opposite conductive sign and a transfer gate formed between the capacitor and the region of opposite conductive sign. The device is fabricated according to the invention such that the insulating film is formed under the electrode and has substantially the same planar form as the electrode, the insulating film contains impurities of a conductive sign opposite to that of the substrate and the region of opposite conductive sign is formed where the insulating film is in contact with the substrate. The region of opposite conductive sign is formed accurately in a self-alignment fashion. Such insulating film is made of an oxide or a nitride of at least one metal selected from the group consisting of Ta, Ti, Hf, Nb, Zr and Al.

REFERENCES:
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patent: 4151607 (1979-04-01), Koyanagi et al.
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patent: 4343657 (1982-08-01), Ito et al.
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Patents Abstracts of Japan, vol. 4, No. 109(E-20) (591), 6th Aug. 1980, p. 18E20 & JP-A-55 65458 (Nippon Denki K.K.), 16-05-1980.
Patents Abstracts of Japan, vol. 2, No. 1, Dec. 26, 1977, p. 9395E77 & JP-A-52 113 181 (Hitachi Seisakusho K.K.), 22-09-1977.
European Search Report, Examiner A. Cardon, 7-7-1983, The Hague.

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