Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

1997-11-26

1999-11-16

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438439, 438362, 438297, 438221, H01L 2176

Patent

active

059857340

ABSTRACT:
A semiconductor device is disclosed, together with a fabricating method therefor. The semiconductor device has an etch barrier structure, made with SiN or SiON, which is formed on an element-isolating region alongside an active region. Although there is an alignment error which causes the element-isolating region to be exposed, the etch barrier structure protects the element-isolating region from being etched when carrying out the etching processes for contact holes in a semiconductor memory cell. Thus, while preventing the deterioration of element-isolation properties, the etch barrier structure can affords a larger allowable alignment error in the etching processes for contact holes, so it is possible to make a small active region and thus, highly integrate semiconductor devices.

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