Vertical type insulated gate bipolar transistor having a planar

Details Vertical type insulated gate bipolar transistor having a planar Vertical type insulated gate bipolar transistor having a planar

1997-11-24

1999-07-20

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257137, 257146, 257154, 257378, 257379, 438135, 438234, H01L 2974, H01L 31111

Patent

active

059258993

ABSTRACT:
A first metal electrode layer is formed to be electrically connected with a p base region formed in an n drift region. A second metal electrode layer which is electrically connected with an emitter region provided in the p base region is formed. A direct current power supply unit is provided to be electrically connected with the first and second metal electrode layers. The direct current power supply unit functions as means for applying forward bias to a pn junction between the n emitter region and the p base region.

REFERENCES:
patent: 4985743 (1991-01-01), Tokura et al.
patent: 5773851 (1998-06-01), Nakamura et al.

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