Ion source and an ion implanting apparatus using it

Details Ion source and an ion implanting apparatus using it Ion source and an ion implanting apparatus using it

1997-06-19

1999-07-20

Nguyen, Kiet T.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250423R, 31511181, H01J 37317

Patent

active

059258861

ABSTRACT:
An ion source comprises a discharge chamber; a wave guide transmitting microwave to generate plasma within said discharge chamber; and a matching tube, located between the discharge chamber and the wave guide, the cross-sectional form of which is tapered in the width thereof in the direction of propagation of the microwave.

REFERENCES:
patent: 5625195 (1997-04-01), Grouillet

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