Epitaxial growth method of semiconductor crystal and molecular b

Details Epitaxial growth method of semiconductor crystal and molecular b Epitaxial growth method of semiconductor crystal and molecular b

1994-11-17

1996-04-09

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117103, 117108, 117953, C30B 7516

Patent

active

055051596

ABSTRACT:
In an epitaxial growth of a group III-V compound semiconductor crystal, there is provided a substrate on which group III element halide molecules are adsorbed. A beam of group V element hydride molecules is supplied toward the substrate for reaction of the group V element hydride and the group III element halide. The vibration energy of each of group V element hydride molecules is excited in the beam and the orientation of the group V element hydride molecules is aligned. As a result, the supplied group V atom directly combines with the group III atom.

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