Integrated transmit/receive switch/low noise amplifier with diss

Details Integrated transmit/receive switch/low noise amplifier with diss Integrated transmit/receive switch/low noise amplifier with diss

1995-06-07

1996-09-10

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257194, 257195, 257197, 257273, H01L 2980, H01L 31112, H01L 31072, H01L 31109

Patent

active

055548652

ABSTRACT:
A T/R switch/LNA for a radar's active array antenna includes dissimilar semiconductor devices in a monolithic microwave integrated circuit (MMIC). The devices are selected to best meet the functional requirements of the T/R switch/LNA. In particular, the LNA is realized with a HEMT and the T/R switch is realized with HBTs. The dissimilar devices are adapted from first and second heterostructures that are arranged to be coplanar and separated by an isolation layer.

REFERENCES:
patent: 5049522 (1991-09-01), Stanchina et al.
patent: 5053348 (1991-10-01), Mishra et al.
patent: 5172197 (1992-12-01), Nguyen et al.
patent: 5243207 (1993-09-01), Plumton et al.
patent: 5250826 (1993-10-01), Chang et al.
patent: 5323030 (1994-06-01), Koscica et al.
patent: 5412235 (1995-05-01), Nakajima et al.
patent: 5488241 (1996-01-01), Journeau

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