Method of producing a bipolar transistor

Details Method of producing a bipolar transistor Method of producing a bipolar transistor

1992-04-10

1999-07-20

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437141, 437160, 437168, 148DIG17, 148DIG34, 148DIG144, H01L 21265

Patent

active

059255749

ABSTRACT:
A method of producing a bipolar transistor composed of collector, base and emitter regions disposed sequentially on a semiconductor substrate. According to the method, a semiconductor layer is deposited on the collector region, the semiconductor layer is cleaned to expose an active surface, an impurity source gas is applied to the exposed active surface while heating the substrate to form an impurity adsorption layer, the impurity is diffused into the semiconductor layer to form the base region, another semiconductor layer is deposited on the base region, this semiconductor layer is cleaned to expose an active surface, another impurity source gas is applied to the exposed active surface while heating the substrate to form another impurity adsorption layer, and impurity is diffused into the semiconductor layer to from the impurity adsorption layer to form the emitter region.

REFERENCES:
patent: 3506508 (1970-04-01), Nickl
patent: 4242691 (1980-12-01), Kotani et al.
patent: 4395433 (1983-07-01), Nagakubo et al.
patent: 4441932 (1984-04-01), Akasaka et al.
patent: 4737471 (1988-04-01), Shirato et al.
patent: 4791074 (1988-12-01), Tsunashima et al.
patent: 4855258 (1989-08-01), Allman et al.
patent: 4861729 (1989-08-01), Fuse et al.
patent: 4940505 (1990-07-01), Schachameyer et al.
patent: 5011789 (1991-04-01), Burns
"Ultrashallow, High Doping of Boron Using Molecular Layer Doping"; by Nishizawa; Applied Physics Letters; 56(1990) Apr. 2, No. 14.
"Metal-Oxide-Silicon Field-Effect Transistor Made by Means of Solid-Phase Doping", by Gong et al.; J. Appl. Phys. 65 (11), Jun. 1, 1989.
Nishizawam, Jun-ichi, "Sample-Structured PMOSFET Fabricated Using Molecular Layer Doping", 8179 IEEE Electron Device Letters, Mar. 11, 1990, pp. 105-106.
Leung, D.L., et al., "CMOS Devices Fabricated in Thin Epitaxal Silicon On Oxide", 1989 IEEE SOS/SOI Technology Conference, Oct., 1989, pp. 74-75.
"Thin-Base Bipolar Technology by Low-Temperature Photo-Epitaxy", Symposium on VLSI Technology May 1987, T. Sugii, et al., pp. 35-36.
"The Effect of Collisional Broadening on Monte Carlo Simulations of High-Field Transport in Semiconductor Devices", IEEE Electron Device Letters, F. Capasso, et al, vol. EDL-2, Nov. 1981.
"Doping Reaction of PH.sub.3 and B.sub.2 H.sub.6 with Si(100)", J.Appl.Phys., Ming L. Yu et al., vol. 59, No. 12, Jun. 16, 1986.
"UV Epitaxy Applied to Make Transistor", Nikkei High Tech Report, Takashi Ito, vol. 4, No. 7, Feb. 13, 1989, p. 10.
"An Uncompensated Silicon Bipolar Junction Transistor Fabricated Using Molecular Beam Epitaxy", EIII Electron Device Letters, R.G. Swartz, et al., vol. EDL-2, No. 11, Nov. 1981, p. 293.
Nikkei High Tech Report, vol. 14, No. 7, Feb. 13, 1989.

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