Method for vapor phase wafer cleaning

Details Method for vapor phase wafer cleaning Method for vapor phase wafer cleaning

1992-06-25

1999-03-09

Kunemund, Robert

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438906, 134 13, H01L 2130

Patent

active

058800310

ABSTRACT:
A controlled amount of gaseous nitrogen (12) is passed over a heated azeotropic solution of hydrogen fluoride and water (16) and producing an hydrogen fluoride vapor. The hydrogen fluoride vapor is combined with gaseous hydrogen chloride (14) and then the wafers (20) are exposed to the combined vapor at low pressure and room temperature.

REFERENCES:
patent: 5078832 (1992-01-01), Tanaka
Wong, Moslehi and Reed, "Characterization of Wafer Cleaning and Oxide Etching Using Vapor-Phase Hydrogen Fluoride," J. Electrochem. Soc. vol. 138, No. 6, Jun., 1991, The Electrochemical Society, Inc.
Deal, McNeilly, Kao and deLarios, "Vapor-Phase Wafer Cleaning, Oxide Etching, and Thin Film Growth," Advantage Production Technology, Inc., paper presented at First Intl. Symp. on Cleaning Technology in Semi-conductor Mfg., Fall Meeting, Electrochemical Soc., Hollywood, FL, Oct. 15-20, 1989.
Deal, Vapor-Phase Wafer Cleaning, Oxide Etching, and Thin Film Growth, First Intl. Symp. on Cleaning Technology in Semiconductor Mfg, Electrochem. Soc., Oct. 1989, pp. 1-8.

Affiliated with

Also associated with

Rating

Method for vapor phase wafer cleaning does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for vapor phase wafer cleaning, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for vapor phase wafer cleaning will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1320682