Polysilicon trench and buried polysilicon wall device structures

Details Polysilicon trench and buried polysilicon wall device structures Polysilicon trench and buried polysilicon wall device structures

1994-12-27

1996-09-10

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437913, H01L 2144, H01L 2148

Patent

active

055545688

ABSTRACT:
This invention describes a device structure and a method of forming the device structure using trenches with sidewalls formed in the substrate of an integrated circuit. A highly doped polysilicon layer is formed on the walls of the trench or the trench is filled with highly doped polysilicon to form the source and drain of a field effect transistor in an integrated circuit. The invention provides reduced source and drain resistance. The capacitances between the gate and source and the gate and drain are reduced as well.

REFERENCES:
patent: 4520552 (1985-06-01), Arnould et al.
patent: 4835584 (1989-05-01), Lancaster
patent: 4963502 (1990-10-01), Teng et al.
patent: 5111257 (1992-05-01), Andoh et al.
patent: 5204280 (1993-04-01), Dhong et al.
patent: 5293512 (1994-03-01), Wen

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