Method of manufacturing a semiconductor device having a capacito

Details Method of manufacturing a semiconductor device having a capacito Method of manufacturing a semiconductor device having a capacito

1994-11-29

1996-09-10

Nguyen, Nam

Fishing, trapping, and vermin destroying

437 64, 437 60, 257295, 257310, H01L 21302

Patent

active

055545599

ABSTRACT:
A semiconductor device in which a capacitor (2) is provided on a surface (10) of a semiconductor body (3) with a semiconductor element (1) in which a lower electrode (11), an oxidic ferroelectric dielectric (12) and an upper electrode (13) are provided in that order, the upper electrode not covering an edge of the dielectric, after which an insulating layer (14) with superimposed metal conductor tracks is provided. According to the invention, the edge of the dielectric (12) not covered by the upper electrode (13) is coated with a coating layer (14, 20, or 30) practically imperviable to hydrogen, after which the device is heated in a hydrogen-containing atmosphere. Heating in a hydrogen atmosphere neutralizes dangling bonds which arise during deposition of the conductor tracks on the insulating layer, while the coating layer protects the dielectric from attacks by hydrogen. The semiconductor device then has a shorter access time.

REFERENCES:
patent: 4870539 (1989-09-01), Chance et al.
patent: 5214300 (1993-05-01), Rohrer et al.

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