Method of forming neuron mosfet with different interpolysilicon

Details Method of forming neuron mosfet with different interpolysilicon Method of forming neuron mosfet with different interpolysilicon

1994-09-01

1996-09-10

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 46, 437 47, 437 60, 437968, 148DIG116, 148DIG117, 148DIG163, H01L 21265

Patent

active

055545459

ABSTRACT:
An MOSFET device is fabricated with a plurality of conductors capacitively coupled to a first electrode, forming a mask on the surface of the first electrode exposing a predetermined zone of the first electrode, doping the first electrode through the mask, removing the mask from the surface of the first electrode, oxidizing the first electrode to form a layer of oxide over the first electrode with a thicker layer of oxide over the predetermined zone and a thinner layer of oxide elsewhere, forming at least one electrode over the first electrode on the thinner layer of oxide outside of the zone and forming at least one other electrode over the first electrode on the thicker layer of oxide inside the zone, whereby the one electrode and the other electrode have substantially different capacitive coupling to the electrode.

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Shibata et al "Function MOS Transistor Featuring Gate-Level Weighted Sum & Threshold Operation", IEEE Transactions on Electron Devices, vol. 39, No. 6, pp. 1444-1455 (Jun. 1992).

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