Field edge manufacture of a T-gate LDD pocket device

Details Field edge manufacture of a T-gate LDD pocket device Field edge manufacture of a T-gate LDD pocket device

1995-08-09

1996-09-10

Thomas, Tom

Fishing, trapping, and vermin destroying

437 40, 437 41, 437 44, 437 69, 257344, 257345, H01L 21265

Patent

active

055545440

ABSTRACT:
A method of manufacturing a T-gate LDD pocket device is shown. Field oxide regions are formed in and on the surface of a semiconductor substrate. The T-gate device will be formed between the field oxide regions. A gate oxide layer is formed on the surface of the substrate between the field oxide. A layer of polysilicon is deposited over the gate oxide layer. Portions of the polysilicon layer are etched away leaving the polysilicon layer only between and over the inner edges of the field oxide. The remaining polysilicon is covered with a photoresist mask wherein the inner edges of the field oxide underlying the polysilicon are protected by the mask. The field oxide not covered by the mask are etched away to form the T-gate. A first set of ions of a first conductivity are implanted at a tilt angle to form lightly doped regions from regions where the field oxide have been removed and underlying the inner edges of the remaining field oxide. A second set of ions of the first conductivity are implanted to form first heavily doped regions at the surface of the substrate from which the field oxide have been removed. Spacers are formed on the sidewalls of the T-gate to protect the lightly doped regions from degradation. A third set of ions of a second conductivity type opposite to the first conductivity type are implanted to form pocket heavily doped regions underlying the first heavily doped regions to complete the fabrication.

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patent: 5223445 (1993-06-01), Fuse
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patent: 5401994 (1995-03-01), Adan
patent: 5405787 (1995-04-01), Kurimoto
patent: 5439835 (1995-08-01), Gonzalez
patent: 5498556 (1996-03-01), Hong et al.

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