Seed crystal for producing monocrystals and method for producing

Details Seed crystal for producing monocrystals and method for producing Seed crystal for producing monocrystals and method for producing

1998-02-17

1999-11-16

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117106, 427250, C30B 2502

Patent

active

059850264

ABSTRACT:
A seed crystal assembly for producing monocrystals and a method for producing SiC monocrystals or monocrystalline SiC layers include a seed crystal with a surface having a first partial region intended as a crystallization surface for a monocrystal grown out of a gas phase and a second partial region with a coating that is chemically resistant to the seed crystal and to the gas phase and does not melt at the growth temperatures. As a result, thermal degradation of the seed crystal is avoided and the quality of the monocrystals which are produced is increased.

REFERENCES:
patent: 4614672 (1986-09-01), Addamiano
patent: 5397431 (1995-03-01), Kadomura
Japanese Patent Abstract No. 7257993 (Doi Hideyuki), dated Oct. 9, 1995.
Japanese Patent Abstract No. 5-105596 (Yoshihary Fujikawa et al.), dated Apr. 27, 1993.
Japanese Patent Abstract No. 4-55397 (Shigehiro Nishino), dated Feb. 24, 1992.
Japanese Patent Abstract No. 1-76997 (Takeshi Nogami), dated Mar. 23, 1989.
Japanese Patent Abstract No. 5-6158452, dated Dec. 7, 1981.
Japanese Patent Abstract No. 5-6105479, dated Aug. 21, 1981.
"Chemical vapor deposition of .beta.-SiC on silicon-on-sapphire and silicon-on-insulator substrates", Pazik et al8347 ., Materials Science & Engineering, Jan. 15, 1992, No. 1/4, Lausanne, Switzerland, pp. 125-129.
"Formation of macrodefects in SiC", R.A. Stein, Phusica B 185, 1993, North-Holland, pp. 212-216.

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