Semiconductor storage cell

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357 23, 357 45, 357 54, H01L 2702

Patent

active

041964411

ABSTRACT:
A programmable nonvolatile FET storage cell comprising crosswise to the ribbonlike source region as well as to the drain region a ribbonlike reading electrode and a separate ribbonlike writing electrode. Both electrodes are disposed upon a gate insulator layer into which a storage medium is embedded which is common to both electrodes.

REFERENCES:
patent: 3836894 (1974-09-01), Cricchi
patent: 4063267 (1977-12-01), Hsia

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