Lateral PNP or NPN with a high gain

Details Lateral PNP or NPN with a high gain Lateral PNP or NPN with a high gain

1978-05-25

1980-04-01

Edlow, Martin H.

357 49, 357 44, 357 55, H01L 2906

Patent

active

041964403

ABSTRACT:
Lateral PNP or NPN devices in isolated monocrystalline silicon pockets wherein silicon dioxide isolation surrounds the pocket and partially, below the surface, within the isolated monocrystalline region are described. The P emitter or N emitter diffusion is made over the portion of the silicon dioxide that partially extends into the monocrystalline isolated pocket. This structure reduces the vertical current injection which will give relatively high (beta) gain even at low base to emitter voltages.

REFERENCES:
patent: 3656034 (1972-04-01), Rideout
patent: 3904450 (1975-09-01), Evans
patent: 3971059 (1976-07-01), Dunkley
patent: 4005453 (1977-01-01), Le Can
patent: 4051506 (1977-09-01), Horie
patent: 4110779 (1978-08-01), Rathbone

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