Refractive index control optical semiconductor device

Details Refractive index control optical semiconductor device Refractive index control optical semiconductor device

1994-06-14

1995-06-13

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 20, H01S 3106, H01S 318

Patent

active

054250420

ABSTRACT:
A refractive index control optical semiconductor device includes a semiconductor p-n junction structure, and a refractive index control semiconductor layer. The semiconductor p-n junction structure outputs light with a forward current. The refractive index control semiconductor layer is formed on a semiconductor substrate, is stacked on the semiconductor p-n junction structure to constitute an optical waveguide, causes a refractive index change of light to occur by carrier injection, and includes a multi-quantum well structure formed by alternately stacking a semiconductor quantum well layer and a barrier layer having a bandgap larger than that of the semiconductor quantum well layer at a plurality of periods. The semiconductor quantum well layer has a lattice constant smaller than that of the semiconductor substrate. The thickness of the semiconductor quantum well layer is set such that a lowest heavy hole sub-band and a lowest light hole sub-band of the semiconductor quantum well layer have nearly the same energy at a .GAMMA.-point in a wave number space.

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M.-C. Amann et al., pp. 253-254, Tuning Range and Threshold Current of the Tunable Twin-Guide (TTG) Laser, IEEE Photonics Technology Letters, vol. 1, No. 9, Sep. 1989.

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