Process for producing semiconductor device substrate using polis

Details Process for producing semiconductor device substrate using polis Process for producing semiconductor device substrate using polis

1990-08-13

1991-07-16

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG12, 148DIG135, H01L 21304

Patent

active

050325442

ABSTRACT:
A process for producing an SOI-structured semiconductor device substrate has the steps of: reducing the diameter of the one Si-monocrystal wafer of two bonded polished Si-monocrystal wafers to be slightly smaller than that of the other Si-monocrystal wafer so that the width of the annular margin defined between the bonded surfaces of the Si-monocrystal wafers is uniform; then forming an annular polishing guard on the cylindrical surface of the one wafer and the margin of the other wafer, the polishing guard having a predetermined thickness and being made of a material providing a polishing speed lower under the same condition than the one wafer; and then polishing the one wafer so as to make it in thin film. The polishing guard provides an accurate thickness control of the resulting Si-monocrystal thin film, in particular, even at a few micrometers level.

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patent: 4321747 (1982-03-01), Takemura et al.
patent: 4638552 (1987-01-01), Shimbo et al.
patent: 4878957 (1989-11-01), Yamaguchi et al.
patent: 4888304 (1989-12-01), Nakagawa et al.
patent: 4908328 (1990-03-01), Hu et al.
patent: 4948748 (1990-08-01), Kitihara et al.

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