Method of manufacturing green light emitting diode

Details Method of manufacturing green light emitting diode Method of manufacturing green light emitting diode

1989-07-06

1991-07-16

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437130, 437133, 437905, 148DIG66, H01L 21208

Patent

active

050325396

ABSTRACT:
In a method of manufacturing a green diode, an included angle defined by a line extending along the longitudinal direction of light and dark stripes of an oxide region formed on a cleavage surface of a GaP single crystal wafer and a surface of the wafer is set to be a predetermined angle, and a liquid phase epitaxial layer having a p-n junction is formed on the surface of the GaP single crystal wafer.

REFERENCES:
patent: 3844904 (1974-10-01), Yahalom
patent: 3868281 (1975-02-01), Morgan
patent: 3969164 (1976-07-01), Cho et al.
patent: 4001056 (1977-01-01), Groves et al.
patent: 4008106 (1977-02-01), Gutierrez et al.
patent: 4032370 (1977-06-01), Matare 437121
EPO Search Report for European Application No. 89112649.5.
"Hemispherical GaP:N Green Electroluminesent Diodes", by Bachrach et al., Solid State Electronics, vol. 16, pp. 1037-1042, 1973, Pergammon Press.

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