Semiconductor laser devices

Details Semiconductor laser devices Semiconductor laser devices

1989-05-10

1990-11-06

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 47, H01S 319

Patent

active

049691511

ABSTRACT:
Carrier injection layers are formed on an Al.sub.x Ga.sub.1-x As clad layer of high resistance by embedding and re-growth with the use of crystal growth processes such as MO-VPE or MO-MBE where material supply sources are all provided by gas sources, whereby it is not required to mesa-etch embedding regions to a depth reaching a substrate. The formation of any separate blocking layer is dispensed with, any possible influence of the substrate is eliminated; and the time constant is decreased by decreasing the inter-electrode capacity.

REFERENCES:
Electronics Letters, Apr. 9, 1987, vol. 23, No. 8.

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