Semiconductor device for SOI structure having lead conductor sui

Details Semiconductor device for SOI structure having lead conductor sui Semiconductor device for SOI structure having lead conductor sui

1992-06-01

1995-06-13

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257557, 257754, 257559, H01L 2972, H01L 2712

Patent

active

054245753

ABSTRACT:
A semiconductor device has an electrically insulating substrate and a semiconductor layer formed on the insulating substrate. A plurality of semiconductor regions are defined so as to be joined to each other to form at least two homojunctions in the semiconductor layer. A lead conductor for one of the semiconductor regions which is required to have a small thickness has a specific structure such that the lead conductor is in contact with the one semiconductor region at the main surface of the semiconductor layer for electrical connection therebetween and extends over that portion of the semiconductor layer which contributes to definition of at least one of the semiconductor regions other than the first-mentioned one semiconductor region.

REFERENCES:
patent: 3598664 (1971-08-01), Kilby
patent: 4404658 (1983-09-01), Ports
patent: 4897698 (1990-01-01), Zorinsky et al.
patent: 5298786 (1994-03-01), Shahid et al.

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