Method of burning-in semiconductor devices

Details Method of burning-in semiconductor devices Method of burning-in semiconductor devices

1997-04-15

1999-03-09

Arbes, Carl J.

Metal working

Method of mechanical manufacture

Electrical device making

29843, 257620, 257665, 438 14, 438 18, H01K 900

Patent

active

058784861

ABSTRACT:
Resilient contact structures are mounted directly to bond pads on semiconductor dies, prior to the dies being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies to be exercised (e.g., tested and/or burned-in) by connecting to the semiconductor dies with a circuit board or the like having a plurality of terminals disposed on a surface thereof. Subsequently, the semiconductor dies may be singulated from the semiconductor wafer, whereupon the same resilient contact structures can be used to effect interconnections between the semiconductor dies and other electronic components (such as wiring substrates, semiconductor packages, etc.). Using the all-metallic composite interconnection elements of the present invention as the resilient contact structures, burn-in can be performed at temperatures of at least 150.degree. C., and can be completed in less than 60 minutes.

REFERENCES:
patent: 5389556 (1995-02-01), Rostoker et al.
patent: 5442282 (1995-08-01), Rostoker et al.
patent: 5539325 (1996-07-01), Rostoker et al.
patent: 5648661 (1997-07-01), Rostoker et al.

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