Thermal sensor

Electrical resistors – Resistance value responsive to a condition – Photoconductive

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

338 15, 338225, 338 18, 29615, 29 2, 2503381, H01L 3108

Patent

active

RE0361364

ABSTRACT:
A two-level IR detector imaging array of high fill-factor design. The upper microbridge detector level is spaced above and overlie the integrated circuit and bus lines on the substrate surface below.

REFERENCES:
patent: 3484611 (1969-12-01), Futaki
patent: 3619614 (1974-05-01), Yamaka
patent: 3629585 (1971-12-01), Desvignes
patent: 3693011 (1972-09-01), DeVaux et al.
patent: 3801949 (1974-04-01), Larrabee
patent: 3851174 (1974-11-01), Tynan et al.
patent: 3896309 (1975-07-01), Halsor et al.
patent: 3898605 (1975-08-01), Burns
patent: 4009516 (1977-03-01), Chiang et al.
patent: 4029962 (1977-06-01), Chapman
patent: 4067104 (1978-01-01), Tracy
patent: 4115692 (1978-09-01), Belcarak et al.
patent: 4169273 (1979-09-01), Hendrickson
patent: 4239312 (1980-12-01), Meyer et al.
patent: 4286278 (1981-08-01), Lorenze, Jr. et al.
patent: 4293768 (1981-10-01), Adachi et al.
patent: 4317126 (1982-02-01), Gragg
patent: 4354109 (1982-10-01), Gelpey et al.
patent: 4365106 (1982-12-01), Pulvari
patent: 4378489 (1983-03-01), Chabinsky et al.
patent: 4463493 (1984-08-01), Momose
patent: 4472239 (1984-09-01), Johnson et al.
patent: 4574263 (1986-03-01), Liddiard
patent: 4654622 (1987-03-01), Foss et al.
patent: 4691104 (1987-09-01), Murata et al.
patent: 4750834 (1988-06-01), Fately
patent: 4754139 (1988-06-01), Ennulat et al.
patent: 4803360 (1989-02-01), Ball et al.
patent: 5017784 (1991-05-01), Sher et al.
patent: 5455421 (1995-10-01), Spears
E. Basseous, Fabrication of Novel Three Dimensional Microstructures by the Anisotropic Etching of (100) and (110) Silicon, 10 IEEE Transactions on Electron Devices, 1178-1185, 1978 (FF).
Kurt E. Peterson, Dynamic Micromechanics on Silicon: Techniques and Devices, 10, IEEE Transactions on Electron Devices, 1241-1250, 1978.
Kurt Peterson & Anne Shartel, Macromechanical Accelerometer Integrated with MOS Detection Circuitry, IBM Research Facility, 1980.
H. Elabd & W.F. Kosonocky, Theory and Measurements of Photoresponse for Thin Film Pd.sub.2 Si and PtSi Infrared Schottky-Barrier Detectors with Optical Cavity, 43 RCA Review, 569-588, 1982.
K.C. Liddiard, Thin Film Resistance Bolometer IR Detectors, Infrared Phys., vol. 24, No. 1, 57-64, 1984.
M. Okuyama, et al., Si-Monolithic Integrated Pyroelectric Infrared Sensor Using PbTiO.sub.3 Thin Film, 6. International Journal of Infrared and Millimeter Waves, 71-78, 1985.
K.C. Liddiard, Thin Film Resistance Bolometer IR Detectors, Infrared Phys., vol. 24, No. 1, 57-64, 1984.
K.C. Liddiard, Thin-film Resistance Bolometer IR Detectors-II, Infrared Phys., vol. 26, No. 1, 43-49, 1986.
Suzuld, et al. An Infrared Detector Using Poly-Silicon p-n Junction Diode, Tech Digest of 9th Sensor Symposium, 71-74, 1990.
A. Tanaka, et al., Infrared Linear Image Sensor using a Poly-Si pn Junction Diode Array, 33 Infrared Phys., 229-236, 1982.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Thermal sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thermal sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thermal sensor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1309975

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.