Metal-oxide-semiconductor device

Details Metal-oxide-semiconductor device Metal-oxide-semiconductor device

1989-08-21

1990-11-06

Wojciechowicz, Edward J.

357 234, 357 41, 357 45, 357 89, H01L 2978

Patent

active

049690248

ABSTRACT:
The present invention relates to a metal-oxide-semiconductor device containing a plurality of units on one semiconductor substrate. The device has a high impurity concentration region of the same conductivity type as a base layer formed near each corner of a source layer and provides improved current capacity in power applications. The high impurity concentration regions reduce a diffusion resistance in the vicinity of the corners of the source layer, thereby improving resistance of each unit to breakdown under electrical stress.

REFERENCES:
patent: 4803532 (1989-02-01), Mihara

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