SOS transistor structure

Details SOS transistor structure SOS transistor structure

1988-08-23

1990-11-06

Hille, Rolf

357 20, 357 4, H01L 2978, H01L 2906, H01L 2712

Patent

active

049690230

ABSTRACT:
A MOS transistor is formed in a silicon layer applied on an insulating base. The channel region of the transistor has a weakly doped region located nearest the surface of the layer and a more heavily doped region nearest the base. The latter region extends in under the source region of the transistor and is connected to the source contact of the transistor via a highly doped region of the same conduction type. The more heavily doped region is doped with a doping dose of at least 2.10.sup.12 cm.sup.-2.

REFERENCES:
patent: 4797721 (1989-01-01), Hsu
Toshio Kumamoto, et al., "An SOI Structure for Flash A/D Converter" IEEE Journal of Solid-State Circuits, vol. 23, No. 1, Feb., 1989, pp. 198-201.

Affiliated with

Also associated with

Rating

SOS transistor structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with SOS transistor structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and SOS transistor structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1309707