Planar type semiconductor device with a high breakdown voltage

Details Planar type semiconductor device with a high breakdown voltage Planar type semiconductor device with a high breakdown voltage

1984-03-14

1986-01-28

Edlow, Martin H.

357 52, 357 234, H01L 2940

Patent

active

045675023

ABSTRACT:
A planar type semiconductor device having a high breakdown voltage, including a diffusion region of a P type formed in a semiconductor layer of an N type, a guard ring region of the P type formed in the semiconductor layer and surrounding the diffusion layer, and an insulating film covering the surface of the semiconductor layer between the diffusion and guard ring region. A field plate is provided which is kept at a potential equal to that of the diffusion region. The field plate covers the entire surface of that portion of the insulating film which is between the diffusion and guard ring regions.

REFERENCES:
patent: 3405329 (1968-10-01), Loro et al.
patent: 3763406 (1973-10-01), Bosselaar

Affiliated with

Also associated with

Rating

Planar type semiconductor device with a high breakdown voltage does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Planar type semiconductor device with a high breakdown voltage, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Planar type semiconductor device with a high breakdown voltage will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1309330