Method for producing a semiconductor device having a ferroelectr

Details Method for producing a semiconductor device having a ferroelectr Method for producing a semiconductor device having a ferroelectr

1994-07-12

1995-06-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

054242380

ABSTRACT:
A semiconductor storage device and a method for producing the same wherein a source region 2 and a drain region 3 are formed in a semiconductor substrate films 14 and 15 of low dielectric constant are formed respectively on the source region 2 and the drain region 3. A ferroelectric film 7 is formed on a channel region 6 surrounded by the source region 2 and the drain region 3. The ferroelectric film 7 is patterned on the films 14 and 15. According to the present invention, semiconductor material is not damaged during the formation and a dielectric polarization efficiency is increased.

REFERENCES:
patent: 5046043 (1991-09-01), Miller et al.
patent: 5198994 (1993-03-01), Natori

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