Method for fabricating a bipolar transistor with reduced base re

Details Method for fabricating a bipolar transistor with reduced base re Method for fabricating a bipolar transistor with reduced base re

1994-06-13

1995-06-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 89, 437 90, H01L 21265, H01L 2120

Patent

active

054242282

ABSTRACT:
A semiconductor device manufacturing method according to the present invention includes forming an outer base region in a collector layer. The outer base region connects an intrinsic base layer and a base electrode so that base contact resistance between them is decreased.

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F. Sato et al., "Self-Aligned Selective MBE Technology for High-Performance Bipolar Transistors", 1990 IEEE, IEDM-90, pp. 607-610.

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