Method of manufacturing a thin film SOI MOSFET

Details Method of manufacturing a thin film SOI MOSFET Method of manufacturing a thin film SOI MOSFET

1994-06-30

1995-06-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 41, 437101, 437 44, 437909, 437986, H01L 21265, H01L 21266, H01L 2184

Patent

active

054242258

ABSTRACT:
An MOS field effect transistor comprises a channel region (6) of a first conductivity type formed in a semiconductor layer (3) on an insulator substrate (2), a source region (8) and a drain region (9) of a second conductivity type formed in contact with one and the other sides of the channel region (6) in the semiconductor layer (3), respectively, a body region (7) formed in contact with at least a part of the channel region (6) and a part of a periphery of the source region (8) in the semiconductor layer (3) and having a higher impurity concentration than that of the channel region (6), a gate dielectric thin film (4) and a gate electrode (5) formed on the channel region (6), and a conductor (14a) connected in common to the source region (8) and the body region (7).

REFERENCES:
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patent: 5075746 (1991-12-01), Hayashi et al.
patent: 5125007 (1992-06-01), Yamaguchi et al.
Jean-Pierre Colinge, "Reduction of Kink Effect in Thin Film SOI MOSFET's", IEEE Electron Device Letters, vol. 9, No. 2, Feb. 1988, pp. 97-99.

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