Semiconductor laser elements

Details Semiconductor laser elements Semiconductor laser elements

1990-10-31

1992-10-13

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 46, 357 4, 357 17, H01S 319

Patent

active

051557380

ABSTRACT:
A semiconductor laser element having a GaAs substrate formed thereon with an active layer of a strained quantum well construction provided with an In.sub.x Ga.sub.1-x As strained quantum well layer and a GaAs barrier layer and clad layers arranged up and down of said active layer through an epitaxial growth means. A lattice mismatching rate of the clad layer with respect to the substrate is less than 10.sup.-3.

REFERENCES:
patent: 4887274 (1989-12-01), Hayakawa et al.
patent: 4941146 (1990-07-01), Kobayashi
patent: 4984242 (1991-01-01), Scifres et al.
patent: 5016252 (1991-05-01), Hamada et al.

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